Wireless communications, radar, and other systems are continuously evolving toward higher power and higher integration, and passive devices face the challenge of continuously increasing power density. Traditional GaAs IPD solutions have advantages in RF performance and integration, but their power handling capability in high-power scenarios is limited. System Architecture Engineer often have to choose between integration and power margin, and in some cases, they need to turn to larger solutions such as ceramic thin-film or cavity-based approaches.

Bonray introduces a high-power passive technology platform based on its proprietary GaN process. While maintaining the chip-scale size and consistency of IPD, it extends the power handling capability to over 100 watts, providing a new technical pathway for passive integration in high-frequency, high-power systems.

Technical Breakthrough: More Than Just "Small" — It's About "Capable"

IPD technology integrates passive components such as resistors, capacitors, and inductors onto a single chip, achieving miniaturization and high consistency. Traditional GaAs IPD offers excellent RF performance, but its power handling is limited due to two fundamental factors: the thermal conductivity of GaAs substrate is only about 46 W/(m·K), causing heat accumulation and performance degradation; in addition, its intrinsic breakdown field strength is limited, constraining the voltage handling capability of the device.

Bonray adopts the GaN IPD process, solving the above problems at the material level. The high thermal conductivity of SiC substrate, the high breakdown field strength of GaN, and lower dielectric loss at high frequencies enable IPD devices to greatly improve power handling capability within the same chip footprint, while also featuring low insertion loss, miniaturization, and high consistency.

This technical pathway extends the application of IPD from conventional power levels to 100‑watt‑class high‑power scenarios, providing a new solution for high‑power passive integration in high‑frequency systems that balances power, loss, and size.

Product Platform: GaN IPD High-Power Passive Technology Platform

Bonray's high-power passive technology platform based on its proprietary GaN process has already formed a passive product portfolio covering multiple categories, wide frequency bands, and high power levels.

Categories: power dividers, couplers, filters, power loads, fixed attenuators, etc.

Frequency: DC to 50 GHz

Power: above 100 watts, customizable upon request

Product forms: available in bare die and packaged devices

Core Advantages: GaN IPD High-Power Passive Technology Platform

Bonray leveraging deep collaboration capabilities across its GaN IPD process platform, provides end‑to‑end services from product selection to delivery, ensuring a smooth transition from prototype to volume production.

Flexible Product Forms: Supports bare die, packaged devices, and other formats to accommodate various system integration needs.

Customization Capability: Frequency bands and power levels can be adjusted upon request, supporting custom development.

Fast Delivery: Leveraging the scalability advantages of wafer‑level processes to achieve efficient transition from prototype development to mass production.

For product selection, link solutions, technical debugging, or sample applications, please contact Bonray's technical and sales teams. We can provide personalized customized services according to your requirements.

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